A nonlinear model for marble sulphation including surface rugosity and mechanical damage

Here we propose and analyze a mathematical model that aims to describe the marble sulphation process occurring in a given material. The model accounts for rugosity as well as for damaging effects. This model is characterized by some technical difficulties that seem hard to overcome from a theoretical viewpoint. Therefore, we introduce some physically reasonable modifications in order to establish the existence of a suitable notion of solution on a given time interval. Numerical simulations are presented and discussed, also in view of further research.     

计算代数方程组孤立奇异解的符号数值方法

求解代数方程组是计算代数几何的最基本问题之一,孤立奇异解的计算则是其中最具挑战性的课题之一,在科学与工程计算中有着广泛的应用,如机器人、计算机视觉、机器学习、人工智能、运筹学、密码学和控制论等.本文结合作者的研究成果,综述了符号数值方法在计算代数系统孤立奇异解、特别是近似奇异解精化与验证方面的研究进展,并对未来的研究方向提出了展望.     

优化端点条件的平面二次均匀B样条插值曲线

在利用反求法构造B样条插值曲线时，往往需要选取端点条件。 因此，可对端点条件进行优化选取，使得构造的B样条插值曲线满足特定要求。提出了一种利用曲线内能极小选取平面二次均匀B样条插值曲线端点条件的算法。首先给出了二次均匀B样条插值曲线分控制顶点与首个控制顶点（即端点条件）的递推关系式；然后给出了利用曲线内能极小优化选取首个控制顶点的算法，证明了利用该算法构造的C¹连续二次均匀B样条插值曲线为保形插值，并通过数值算例证明了算法的有效性；最后，为便于实际应用，基于MATLAB平台设计了算法所对应的图形用户界面，用户通过简单的操作即可获得光顺的C¹连续二次均匀B样条保形插值曲线。     

从废水到新能源:光催化燃料电池的优化与应用

随着经济的飞速发展,社会对能源的需求日益扩大,对工业废水的无害化处理也提出了更高的要求。光催化燃料电池 (photocatalytic fuel cell, PFC) 在燃料电池中引入半导体光催化材料作为电极,实现了有机污染物高效降解和同步对外产电的双重功能,在废水无害化与资源化利用方面具有潜在的应用价值。半导体光催化电极是PFC系统高效运行的核心组件,增强其可见光响应和光生载流子分离是提高PFC性能的关键策略。反应器结构设计和运行参数优化也有利于改善PFC性能。本文从PFC基本原理和应用入手,综述了PFC在环境污染物资源化处理中的研究进展,并详细阐述了提高PFC的污染控制性能和产电效率的优化手段,为进一步设计高效稳定的PFC系统并实现其在水污染控制和清洁能源生产中的应用提供理论指导。     

Metamorphic InAs(Sb)/InGaAs/InAlAs nanoheterostructures grown on GaAs for efficient mid-IR emitters

High-efficiency semiconductor lasers and light-emitting diodes operating in the 3–5?μm mid-infrared (mid-IR) spectral range are currently of great demand for a wide variety of applications, in particular, gas sensing, noninvasive medical tests, IR spectroscopy etc. III-V compounds with a lattice constant of about 6.1?Å are traditionally used for this spectral range. The attractive idea to fabricate such emitters on GaAs substrates by using In(Ga,Al)As compounds is restricted by either the minimum operating wavelength of ～8?μm in case of pseudomorphic AlGaAs-based quantum cascade lasers or requires utilization of thick metamorphic In_xAl_1-xAs buffer layers (MBLs) playing a key role in reducing the density of threading dislocations (TDs) in an active region, which otherwise result in a strong decay of the quantum efficiency of such mid-IR emitters. In this review we present the results of careful investigations of employing the convex-graded In_xAl_1-xAs MBLs for fabrication by molecular beam epitaxy on GaAs (001) substrates of In(Ga,Al)As heterostructures with a combined type-II/type-I InSb/InAs/InGaAs quantum well (QW) for efficient mid-IR emitters (3–3.6?μm). The issues of strain relaxation, elastic stress balance, efficiency of radiative and non-radiative recombination at T?=?10–300?K are discussed in relation to molecular beam epitaxy (MBE) growth conditions and designs of the structures. A wide complex of techniques including in-situ reflection high-energy electron diffraction, atomic force microscopy (AFM), scanning and transmission electron microscopies, X-ray diffractometry, reciprocal space mapping, selective area electron diffraction, as well as photoluminescence (PL) and Fourier-transformed infrared spectroscopy was used to study in detail structural and optical properties of the metamorphic QW structures. Optimization of the growth conditions (the substrate temperature, the As₄/III ratio) and elastic strain profiles governed by variation of an inverse step in the In content profile between the MBL and the InAlAs virtual substrate results in decrease in the TD density (down to 3?×?10⁷ cm^?2), increase of the thickness of the low-TD-density near-surface MBL region to 250–300?nm, the extremely low surface roughness with the RMS value of 1.6–2.4?nm, measured by AFM, as well as rather high 3.5?μm-PL intensity at temperatures up to 300?K in such structures. The obtained results indicate that the metamorphic InSb/In(Ga,Al)As QW heterostructures of proper design, grown under the optimum MBE conditions, are very promising for fabricating the efficient mid-IR emitters on a GaAs platform.     

改革开放以来高中化学教科书物质结构内容选择及演变

以1978年改革开放以来人民教育出版社出版的5套高中化学教科书作为研究对象，梳理其物质结构内容的演变，发现近40年来高中化学教科书中物质结构内容选择呈钟摆现象，同时其内容组织的结构化理念日益清晰。此外，为新时期我国高中化学教科书的编写提供了一些建议。